EE 2212

PROBLEM SET 10

S. G. Burns

Due:   Wednesday, 20 November 2019

 

1.      Simple and Widlar Current Sink and Source Calculations

(a)             Compute a value for IC2 which is the current you would sink from a circuit requiring that current bias level.

(b)             Design a Widlar current source to sink the current computed in Part (a). Refer to Figure 2.  You have a fair amount of design flexibility in R1 and the resultant value of R2.

 

 

2.     Current Source System From An Old Quiz

 

Assume b >> 1, VBE(on) = 0.7 volts,  all npn  junction areas identical, and all pnp junction areas are identical.

 

 

IREF = ______________               IC2  = _____________________

 

         IC3  = _______________              IC4  = _______________     R2 =   ______________

 

 

 

3.      The following is a circuit diagram of a National Semiconductor LM 741 operational amplifier. Recall from the beginning of the semester that I mentioned that you will be able to analyze key sub-circuits of operational amplifiers and related circuits by the end of the semester.  I have circled key elements of the current source system you are analyze in the LM 741. Assume all |VBE(on)| = 0.7 volts (for both npn and pnp).    V+ = 12 volts and V- = -12 volts. All npn transistors have equal junction areas and all pnp transistors have equal junction areas.    741signetics.jpg  You will have to solve a transcendental equation to obtain IC10.

Compute values for IREF, IC10, and I13.

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4.   Text 16.8 Only Part (b) and assume λ = 0.  This is an NMOS current mirror system, Figure 16.8. “One liner” of arithmetic without a

      calculator”!  You can throw away your calculator for this problem.

 

5.  Adapted from an old quiz.  NMOS Current Mirror System. Similar to Problem 4 with some added wrinkles.

     Once you realize that ID2 = 50 μA the problem can be done by inspection, or at most on one line, without a calculator! Several elements of

     This problem were used on an old quiz.

 

Assume the following:

(a) M1 and M2 are matched (b) l = 0 for all MOSFETS (c) L identical for all FETS. (d) ID2 = 50 μA.

(e) W1=W2=W3=W6=W8 (f) W4=W5=2 x W2 (g) W7 = 3 x W8 (h) Except for W/L ratios established by the photolithography design, the fabrication process is the same for all FETs.

Pay attention to sign conventions!

Provide values for:

ID3 =__________________ ID4 = ____________________ ID7 ________________

ID5 = _________________ (Trick question. Careful-look at the drain circuit for M5!


 

 

You may be asked to do this over Thanksgiving recess

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